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| KYZ35A05 ... KYZ35A6, KYZ35K05 ... KYZ35K6 KYZ35A05 ... KYZ35A6, KYZ35K05 ... KYZ35K6 Silicon-Press-Fit-Diodes - High Temperature Diodes Silizium-Einpress-Dioden - Hochtemperatur-Dioden Version 2006-04-22 Nominal Current Nennstrom O 16 0.5 35 A 50 ... 600 V Repetitive peak reverse voltage Periodische Spitzensperrspannung Metal press-fit case with glass seal Metall-Einpressgehause mit Glas-Durchfuhrung Weight approx. - Gewicht ca. 16 6.60.5 4 10 g 1.50.5 O 12.770.04 Compound has classification UL94V-0 Vergussmasse nach UL94V-0 klassifiziert Standard packaging: bulk Standard Lieferform: lose im Karton Dimensions - Mae [mm] Maximum ratings Type / Typ Wire to / Draht an Anode KYZ35A05 KYZ35A1 KYZ35A2 KYZ35A3 KYZ35A4 KYZ35A6 Cathode KYZ35K05 KYZ35K1 KYZ35K2 KYZ35K3 KYZ35K4 KYZ35K6 Repetive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 50 100 200 300 400 600 TC = 100C f > 15 Hz TA = 25C TA = 25C IFAV IFRM IFSM i2t Tj TS Grenzwerte Surge peak reverse voltage Stospitzensperrspannung VRSM [V] 60 120 240 360 480 700 35 A 130 A 1) 360/400 A 660 A2s -50...+175C -50...+175C Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave Stostrom fur eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Operating junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur 1 Max. case temperature TC = 150C - Max. Gehausetemperatur TC = 150C http://www.diotec.com/ (c) Diotec Semiconductor AG 1 KYZ35A05 ... KYZ35A6, KYZ35K05 ... KYZ35K6 Characteristics Forward Voltage Durchlass-Spannung Leakage Current Sperrstrom Thermal Resistance Junction - Case Warmewiderstand Sperrschicht - Gehause Tj = 25C Tj = 25C IF = 35 A VR = VRRM VF IR RthC Kennwerte < 1.1 V < 100 A < 0.8 K/W 120 [%] 100 10 3 [A] 10 2 Tj = 125C 80 Tj = 25C 60 10 40 1 20 IFAV 0 0 TC 50 100 150 [C] Rated forward current versus case temperature Zul. Richtstrom in Abh. von der Gehausetemp. IF 10 -1 360a-(35a-1,1v) 0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 10 3 [A] 102 iF 10 1 10 10 [n] 10 Peak forward surge current versus number of cycles at 50 Hz Durchla-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz 2 3 (c) Diotec Semiconductor AG http://www.diotec.com/ 2 |
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